FJ

DATA SHEET

      Power chips

JZ005

Absolute Maximum Ratings

Symbol

Conditions

Values

Units

V_RRM

T_vj = 25 °C, I_R = 0.05 mA

1200～1800

V

I_F(AV)

T_h = 80 °C, T_vjmax = 150 °C

25

A

I_FSM

T_vjmax = 150 °C, 10 ms, half sine wave

450

A

I²t

T_vjmax = 150 °C, 10 ms, half sine wave

400

A²s

DIODE

T_vjmax

+ 150

°C

Electrical Characteristics

I_F(AV) = 25 A

Symbol

Conditions

min.

typ.

max.

Units

V_RRM = 1600 V

I_R

T_vj = 25 °C, V_RRM

0.05

mA

Size: 5.0 mm X 5.0 mm

T_vj = 150 °C, V_RRM

3

mA

V_F

T_vj = 25 °C, I_F = 80 A

1.33

V

Features

V_(TO)

T_vj = 125 °C,

0.83

V

t_rr

T_vj = 25 °C, ± 1 A

10

µs

l         high current density due to mesa technology

Thermal Characteristics

l         high surge current

Symbol

Conditions

min.

typ.

max.

Units

l         compatible to all standard solder processes

T_vj

- 40

+ 150

°C

T_stg

- 40

+ 150

°C

T_solder

10 min

+ 250

°C

Typical Applications

T_solder

5 min

+ 320

°C

R_th(j-h)

soldered on 0.38 mm DCB, reference point on copper heatsink close to the chip.

1.5

K / W

l         uncontrolled rectifier bridges

Mechanical Characteristics

Parameter

Units

raster size

5.0 x 5.0

mm

Area total

25

mm²

Chips / Tray

148

pcs

Anode metallisation

solderable

Cathode metallisation

solderable

wire bond

FJ

             DATA SHEET

      Power chips

        JZ006

Absolute Maximum Ratings

Symbol

Conditions

Values

Units

V_RRM

T_vj = 25 °C, I_R = 0.05 mA

1200～1800

V

I_F(AV)

T_h = 80 °C, T_vjmax = 150 °C

50

A

I_FSM

T_vjmax = 150 °C, 10 ms, half sine wave

900

A

I²t

T_vjmax = 150 °C, 10 ms, half sine wave

1550

A²s

DIODE

T_vjmax

+ 150

°C

Electrical Characteristics

I_F(AV) = 50 A

Symbol

Conditions

min.

typ.

max.

Units

V_RRM = 1600 V

I_R

T_vj = 25 °C, V_RRM

0.05

mA

Size: 7.0 mm X 7.0 mm

T_vj = 150 °C, V_RRM

4.5

mA

V_F

T_vj = 25 °C, I_F = 150 A

1.28

V

Features

V_(TO)

T_vj = 125 °C,

0.83

V