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Absolute Maximum Ratings |
|
Symbol |
Conditions |
Values |
Units |
|
VDRM |
Tvj = 25 °C, ID = 0.05 mA |
1200~1600 |
V |
|
VRRM |
Tvj = 25 °C, IR = 0.05 mA |
1200~1600 |
v |
|
IT(AV) |
Tc = 80 °C, Tvjmax = 125 °C |
10 |
A |
|
ITSM |
Tvjmax
= 125 °C, 10 ms, half sine wave |
180 |
A |
|
I2t |
Tvjmax
= 125 °C, 10 ms, half sine wave |
360 |
A2s |
THYRISTOR
|
Tvjmax |
|
+ 125 |
°C |
|
|
|
|
Corner gate |
Electrical Characteristics
|
|
Symbol |
Conditions |
Min. |
typ. |
max. |
Units |
|
|
VT |
Tvj
= 25 °C, IT = 30A |
|
|
1.81 |
V |
|
IT(AV) =
10A |
VT(TO) |
Tvjmax
= 125°C |
|
1 |
|
V |
|
VRRM =
1600 V |
IGT |
Tvj
= 25 °C |
|
|
100 |
mA |
|
Size: 5.0 mm X 5.0 mm |
VGT |
Tvj
= 25 °C |
|
|
1.65 |
V |
|
|
IGD |
Tvj
= 115 °C |
6 |
|
|
mA |
|
|
VGD |
Tvj
= 125 °C |
0.25 |
|
|
V |
|
|
IH |
Tvj
= 25 °C |
|
|
165 |
mA |
|
IL |
Tvj
= 25 °C |
|
|
330 |
mA |
|
l
high current density due to double mesa
technology |
IR,ID |
Tvjmax
= 125°C |
|
4 |
|
mA |
|
|
|
|
|
|
|
|
Dynamic Characteristics |
|
l
high surge current |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Units |
|
l
compatible to all standard solder processes
|
tq |
Tvjmax
= 125 °C |
|
150 |
|
µs |
|
(di / dt)cr |
Tvjmax
= 125 °C |
|
|
50 |
A / µs |
|
|
(dv / dt)cr |
Tvjmax
= 125 °C |
|
1000 |
|
V / µs |
|
Typical Applications |
|
|
|
|
|
|
|
Thermal Characteristics |
|
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Units |
|
l
controlled rectifier circuits |
Tvj |
|
- 40 |
|
+ 125 |
°C |
|
l
solid state relays |
Tstg |
|
- 40 |
|
+ 125 |
°C |
|
l
temperature control |
Tsolder |
|
|
|
+ 255 |
°C |
|
l
professional light dimming |
Rth(j-c) |
|
|
0.51 |
|
K / W |
|
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|
Mechanical Characteristics |
|
|
Parameter |
|
Units |
|
|
raster
size |
5.0 x 5.0 |
mm |
|
|
Area
total |
25 |
mm2 |
|
|
Chips /
tray |
148 |
pcs |
|
|
Anode
metallisation |
solderable |
|
|
|
Gate and
Cathode metallisation |
solderable |
|
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|
wire bond |
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